Charge carrier transport properties in layer structured hexagonal boron nitride

Charge carrier transport properties in layer structured hexagonal boron nitride

Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN i...

Thermal transport across graphene and single layer hexagonal boron nitride

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 · cm,...

Inter-layer potential for hexagonal boron nitride.

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...

Optoelectronic properties of hexagonal boron nitride epilayers

This paper summarizes recent progress primarily achieved in authors’ laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and com...